Super High-Power GaAlAs IR Emitters: OD-110L
Opto Diode's new series of super high power gallium aluminum arsenide (GaAlAs) infrared (IR) emitters includes the OD-110L, which features ultra high optical output with a very narrow optical beam, making it ideal for night vision (NV) and other military imaging applications including integration into illuminators and markers, and systems utilizing NV goggles and cameras. OD-110L is also suitable for harsh environments.
Super High-Power GaAlAs IR Emitters: OD-110L Features:
- Ultra-High Optical Output
- Four Wire Bonds on Die Corners
- Very Narrow Optical Beam
- Standard 3-Lead TO-39 Hermetic Package Chip Size: 0.026" x 0.026"
The absolute maximum rating at 25 degrees C (case) for power dissipation is 1000mW, with a continuous-forward-current rating at 500mW. The OD-110L lead-soldering temperature (1/16 in. from the case for 10 seconds) is 260 degrees C. Storage and operating temperatures range from -40 degrees C to 100 degrees C, making these devices suitable for harsh environments and for integration into illuminators and markers, and systems utilizing NV goggles and cameras.