Opto Diode Introduces High-Powered GaAlAs Near-IR Emitters

Opto Diode an ITW company, introduces the OD-110W GaAlAs near-infrared (IR) Emitters. Designed for night vision and surveillance applications, the new near-IR light-emitting diodes (near-IRLEDs) feature a uniform optical beam with a typical peak emission wavelength of 850 nm and optical output of 140 mW.

Ideal for rugged applications such as harsh industrial environments or deployment in the field, these durable near-IRLEDs are housed in standard 3-lead, TO-39 hermetically-sealed packages and have gold plating on all surfaces. The four wire bonds are positioned on the die corners to minimize potential artifacts in imaging applications.

The chip size is 0.026 in. x 0.026 in. and all materials are RoHS compliant. Typical performance includes a half intensity beam angle of 110 degrees, forward voltage of 1.7 volts and rise and fall times of 20 nanoseconds each.

Opto Diode’s full line of high powered 850 nm emitters offers a range of performance attributes to meet your application requirements. To learn more about the company’s near-IRLEDs, please visit http://optodiode.com/products.html.

About Opto Diode Corporation
Opto Diode Corporation, an ITW Company based in Camarillo, California, has a long history of delivering industry-leading photodetectors and LEDs. Available in standard and custom designs, Opto Diode products have supported the photonics industry for over 30 years and earned a reputation for high performance, superior quality and reliability. With the acquisition of International Radiation Detectors (IRD) and the merger of Cal Sensors (CSI), Opto Diode now offers industry-leading performance detectors from the extreme UV to the mid-infrared (mid-IR) regions of the electromagnetic spectrum. The IRD product line detects high energy particles and photons in the UV and X-ray regions. The CSI detectors provide superior sensitivity to discriminate trace gases or detect heat, sparks or flames in the mid-IR spectrum.

Complemented by high performance LEDs with radiometric emissions from 365 to 940 nm and IR emitters covering 1 to 10 microns, Opto Diode supports customer measurement needs from prototyping to high volume production. All products are designed and manufactured in the US. The Opto Diode facility is optimized for manufacturing with on-site wafer fabrication, class 1,000 to 10,000 clean rooms, extensive assembly capabilities and packaging expertise, delivering products to fulfill specified design requirements. Applying rigorous quality control standards, Opto Diode serves a variety of industries including: medical, test & measurement, military/defense, biotechnology, R&D, entertainment, industrial, aerospace and automotive. For more information, visit www.optodiode.com.