IR-Enhanced CCD Image Sensors for Raman Spectroscopy
Hamamatsu’s S11500-1007 and S11510 series are back-thinned CCDs with improved NIR sensitivity, and they are ideal as detectors in Raman Spectroscopy. Our unique technology in laser processing was used to form a MEMS structure on the back side of the CCD. This improved the CCD’s sensitivity in the NIR region, which is particularly beneficial for detecting long-wavelength Raman emissions.
Click Here To Download:
•Datasheet: IR-Enhanced CCD Image Sensors for Raman Spectroscopy: S11500-1007
•Datasheet: IR-Enhanced CCD Image Sensors for Raman Spectroscopy: S11510-1006
Contact Hamamatsu for more information on their IR-Enhanced CCD Image Sensors for Raman Spectroscopy or to discuss your application.
These CCDs feature 40% quantum efficiency at 1000 nm, and have a wide spectral response range from 200 nm to 1100 nm.
In addition, the CCD can be operated as a linear image sensor by binning pixels. The binning operation ensures even higher signal-to-noise ratio and faster signal processing speed compared to methods that use an external circuit to add signals digitally.
S11500-1007 features:
- Enhanced NIR sensitivity: 40% QE at 1000 nm
- Spectral response: 200 nm to 1100 nm
- Wide dynamic range
- Low readout noise
- MPP operation
- Pixel size: 24 x 24 µm
- Number of active pixels: 1024 (H) x 122 (V) pixels
S11510 series features:
- Enhanced NIR sensitivity: 40% QE at 1000 nm
- Spectral response: 200 nm to 1100 nm
- High CCD node sensitivity: 6.5 µV/e-
- High full-well capacity and wide dynamic range
- Antiblooming function
- MPP operation
- Pixel size: 14 x 14 µm
- S11510-1006: 1024 (H) x 64 (V) pixels
- S11510-1106: 2048 (H) x 64 (V) pixels
Click Here To Download:
•Datasheet: IR-Enhanced CCD Image Sensors for Raman Spectroscopy: S11500-1007
•Datasheet: IR-Enhanced CCD Image Sensors for Raman Spectroscopy: S11510-1006
Visit Hamamatsu’ website for more information.