High-Powered GaAlAs Near-Infrared Emitter: OD-110W Datasheet

The OD-110W GaAlAs near-infrared emitter is designed for high-powered night vision and surveillance applications, and rugged applications such as harsh industrial environments or deployment in the field. Features include uniform optical beams with a typical peak emission wavelength of 850 nm, an optical output of 140mW, a chip size of 0.026 in. x 0.026 in., and gold plating on all surfaces. To learn more about Opto Diode’s new OD-110W GaAlAs near-IR emitter, download the datasheet.