Avalanche Photodiodes for Analytical Applications

The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants achieved by segmentation of the light entry p surface opposite the junction. With this design, there is no dead space between the elements and therefore no loss of response at boresight.

The C30927EH-01, -02 and -03 are optimized for use at wavelengths of 1060, 900, and 800 nm respectively. Each device type will provide high responsivity and excellent performance when operated within about 50nm of the specified wavelength.

The C30985E is a 25 element monolithic linear APD array having a high inter-electrode resistance with a 75 µm dead space between the elements. Packages have a common ground and bias with a separate lead for each element output.

The C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach-through" structure. The design of these photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced without introducing any undesirable properties.

These APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes retain the low noise, low capacitance, and fast rise and fall times characteristics.

To help simplify many design needs, these APDs are also available in Excelitas' high performance hybrid preamplifier module type C30659 series, as well as the preamplifier and TE cooler incorporated module type LLAM series.

Applications

• Spectroscopy
• Particle detection
• Spot tracking and alignment systems
• Adaptive optics
• LIDAR

Features and Benefits

• High quantum efficiency
• Hermetically sealed packages
• Monolithic chip with minimal dead space between elements
• Specific tailored wavelength response
• RoHS compliant