Product/Service
PIN Photodiodes: Fast Photodiodes for Low Voltage Applications
Source: First Sensor AG
Silicon Sensor International AG and Pacific Silicon Sensor present fast epitaxial photodiodes especially designed for low bias voltages between 3V und 5V. This series of photodiodes is ideal for VIS- and NIR-applications with CMOS components.
This series of fast epitaxial photodiodes is especially designed for low bias voltages between 3V und 5V. It is therefore ideal for VIS- and NIR-applications with CMOS components.
Special Features
- Pin-Photodiodes with epitaxial layer structure for fast rise time at low bias voltage
- Epitaxial layer thickness optimized for best speed and responsivity at 850nm.
- Low bias voltage - fully depleted at 3.5V
Application
- Pulsed light detection
- High speed photometry
- High speed optical communications
- Fiber optic light monitoring
Click here to contact Silicon Sensor regarding your custom requirements or to request a quote.
Fast Photodiodes for Low Voltage Applications Series Overview (With Datasheets)
| Order number |
Type No. |
Active Area | Dark current (nA) | Rise time (ns) | Datasheets | ||
| Chip | Package | Size (mm) | Area (mm²) | 3,5 V | 850 nm | 3,5 V | 50 Ω | (Download) | |
| 501126 | PS0.25-5t | LCC6.1 |
0,5 x 0,5
|
0,25 | 0,01 | 0.4 | 
|
| 501125 | PC0.55-5t | LCC6.1 |
Ø 0.84
|
0,55 | 0,005 | 1 | 
|
| 501127 | PS1-5t | LCC6.1 |
1,0 x 1,0
|
1 | 0,01 | 1,0 |
|
Click here to visit Silicon Sensors' website for more information on fast photodiodes for low voltage applications.
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