Datasheet
Datasheet: High-Speed InGaAs Avalanche Photodiode: G8931-04
Source: Hamamatsu Corporation
In addition to high speed, the G8931-04 features a large 40-micron diameter active area and can provide high signal-to-noise ratio. Wavelength of peak sensitivity is 1.55 microns, at which photosensitivity is typically 0.9 A/W. Dark current overall is typically only 40 nA. Other advantages of the G8931-04 include low breakdown voltage (between 40 V to 60 V) and low terminal capacitance (typically 0.35 pF).
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